NTJD4152PT1G vs NTJD4152PT1 vs NTJD4152PT1G , FLZ8V2B

 
PartNumberNTJD4152PT1GNTJD4152PT1NTJD4152PT1G , FLZ8V2B
DescriptionMOSFET 20V 0.88mA P-Channel ESD ProtectionMOSFET 20V 0.88A P-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current880 mA880 mA-
Rds On Drain Source Resistance1 Ohms600 mOhms-
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage1.8 V12 V-
Qg Gate Charge2.2 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation272 mW272 mW-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTJD4152P--
Transistor Type2 P-Channel2 P-Channel-
TypeMOSFETMOSFET-
Width1.25 mm1.25 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min3 S3 S-
Fall Time3.5 ns6.5 ns-
Product TypeMOSFETMOSFET-
Rise Time6.5 ns6.5 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13.5 ns13.5 ns-
Typical Turn On Delay Time5.8 ns5.8 ns-
Unit Weight0.000265 oz0.000265 oz-
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