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| PartNumber | NTZD3151PT1G | NTZD3152P | NTZD3152PT1 |
| Description | |||
| Manufacturer | - | - | ON Semiconductor |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | NTZD3152P |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Unit Weight | - | - | 0.000289 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-563, SOT-666 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | SOT-563 |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 250mW |
| Transistor Type | - | - | 2 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 175pF @ 16V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 430mA |
| Rds On Max Id Vgs | - | - | 900 mOhm @ 430mA, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 2.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 250 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 6 V |
| Id Continuous Drain Current | - | - | - 430 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 1 Ohms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 35 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Channel Mode | - | - | Enhancement |