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| PartNumber | NVD5C454NLT4G | NVD5C434NT4G | NVD5C446NT4G |
| Description | MOSFET T6 40V DPAK EXP | MOSFET T6 40V SL IN DPAK | MOSFET T6 40V SL DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 88 A | 163 A | 101 A |
| Rds On Drain Source Resistance | 3.9 mOhms | 1.7 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 43 nC | 80.6 nC | 34.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 56 W | 117 W | 101 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 106 S | 155 S | 100 S |
| Fall Time | 7 ns | 14 ns | 17 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 38 ns | 78 ns | 62 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 43 ns | 43 ns |
| Typical Turn On Delay Time | 10 ns | 15 ns | 20 ns |
| Series | - | NVD5C434N | NVD5C446N |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Unit Weight | - | 0.011993 oz | 0.011993 oz |