NVMD3P03R2G vs NVMD4N03R2G vs NVMD3P03

 
PartNumberNVMD3P03R2GNVMD4N03R2GNVMD3P03
DescriptionMOSFET PFET SO8 30V 3A 85 MOHMMOSFET NFET SO8 30V 4A 60MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8-
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.05 A--
Rds On Drain Source Resistance85 mOhms--
QualificationAEC-Q101AEC-Q101-
PackagingReelReelTape & Reel (TR)
SeriesNTMD3P03NTMD4N03NTMD3P03
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.019048 oz-0.019048 oz
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOIC
FET Type--2 P-Channel (Dual)
Power Max--730mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--750pF @ 24V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.34A
Rds On Max Id Vgs--85 mOhm @ 3.05A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--25nC @ 10V
Id Continuous Drain Current--- 3.05 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--85 mOhms
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