NVMFD5853NLT1G vs NVMFD5853N vs NVMFD5853NL

 
PartNumberNVMFD5853NLT1GNVMFD5853NNVMFD5853NL
DescriptionMOSFET NFET SO8FL 40V 29A 10MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDFN-5x6-8--
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance10 mOhms--
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
SeriesNVMFD5853NLNVMFD5853NLNVMFD5853NL
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Unit Weight0.001319 oz0.001319 oz0.001319 oz
Package Case-8-PowerTDFN8-PowerTDFN
Operating Temperature--55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FET Type-2 N-Channel (Dual)2 N-Channel (Dual)
Power Max-3W3W
Drain to Source Voltage Vdss-40V40V
Input Capacitance Ciss Vds-1100pF @ 25V1100pF @ 25V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-12A12A
Rds On Max Id Vgs-10 mOhm @ 15A, 10V10 mOhm @ 15A, 10V
Vgs th Max Id-2.4V @ 250μA2.4V @ 250μA
Gate Charge Qg Vgs-23nC @ 10V23nC @ 10V
Id Continuous Drain Current-34 A34 A
Vds Drain Source Breakdown Voltage-40 V40 V
Rds On Drain Source Resistance-10 mOhms10 mOhms
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