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| PartNumber | NVMFS4C05NT1G | NVMFS4C05NT3G | NVMFS4C05N |
| Description | MOSFET NFET SO8FL 30V 116A 3.4MO | MOSFET NFET SO8FL 30V 116A 3.4MO | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-FL-8 | SO-FL-8 | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 116 A | 127 A | - |
| Rds On Drain Source Resistance | 3.4 mOhms | 2.3 mOhms | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Series | NVMFS4C05N | NVMFS4C05N | NVMFS4C05N |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1500 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 1.3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 30 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 79 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 68 S | - |
| Fall Time | - | 5 ns | - |
| Rise Time | - | 26 ns | - |
| Typical Turn Off Delay Time | - | 26 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| Unit Weight | - | 0.003781 oz | - |
| Package Case | - | - | SO-8FL |
| Id Continuous Drain Current | - | - | 116 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 3.4 mOhms |