NVMFS5834NLT3G vs NVMFS5834NLT1G vs NVMFS5834NL

 
PartNumberNVMFS5834NLT3GNVMFS5834NLT1GNVMFS5834NL
DescriptionMOSFET NFET SO8FL 40V 75A 9.3MOHMOSFET NFET SO8FL 40V 75A 9.3MOH
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current75 A75 A-
Rds On Drain Source Resistance9.3 mOhms11.3 mOhms-
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
SeriesNVMFS5834NLNVMFS5834NLNVMFS5834NL
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50001500-
SubcategoryMOSFETsMOSFETs-
Vgs th Gate Source Threshold Voltage-3 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-24 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-107 W-
Forward Transconductance Min-29 S-
Fall Time-6.6 ns6.6 ns
Rise Time-56.4 ns56.4 ns
Typical Turn Off Delay Time-17.4 ns17.4 ns
Typical Turn On Delay Time-10 ns10 ns
Unit Weight-0.003781 oz-
Package Case--SO-8FL
Pd Power Dissipation--107 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--75 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--11.3 mOhms
Qg Gate Charge--24 nC
Forward Transconductance Min--29 S
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