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| PartNumber | NVMFS5C410NLAFT1G | NVMFS5C410NLAFT3G | NVMFS5C410NL |
| Description | MOSFET T6 40V HEFET | MOSFET T6 40V HEFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 330 A | 330 A | - |
| Rds On Drain Source Resistance | 650 uOhms | 650 uOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 143 nC | 143 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 167 W, 3.8 W | 167 W, 3.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 190 S | 190 S | - |
| Fall Time | 177 ns | 177 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 130 ns | 130 ns | - |
| Factory Pack Quantity | 1500 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 66 ns | 66 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |