 |  |  | |
| PartNumber | NXP3875YR | NXP3875YVL | NXP3875Y |
| Description | Bipolar Transistors - BJT 51V 150 mA NPN gnrl purpose transistors | Bipolar Transistors - BJT NXP3875Y/TO-236AB/REEL 11" Q3/ | Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 50 V, 80 MHz, 200 mW, 150 mA, 120 RoHS Compliant: Yes |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-236AB-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 250 mV | - | 250 mV |
| Maximum DC Collector Current | 150 mA | - | 150 mA |
| Gain Bandwidth Product fT | 80 MHz | - | 80 MHz |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| DC Current Gain hFE Max | 240 | - | 240 |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | Nexperia | - |
| Continuous Collector Current | 200 mA | - | 200 mA |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Package Case | - | - | TO-236AB-3 |
| Pd Power Dissipation | - | - | 200 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| Collector Base Voltage VCBO | - | - | 60 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 200 |