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| PartNumber | PBSS4260PAN,115 | PBSS4260PAN | PBSS4260PANP |
| Description | Bipolar Transistors - BJT 60V 2A NPN/NPN lo VCEsat transistor | - Bulk (Alt: PBSS4260PAN) | |
| Manufacturer | Nexperia | NXP Semiconductors | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 70 mV | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 140 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 430 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 290 | - | - |
| Pd Power Dissipation | 1450 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000254 oz | - | - |
| Series | - | - | - |
| Package Case | - | 6-UDFN Exposed Pad | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-HUSON (2x2) | - |
| Power Max | - | 510mW | - |
| Transistor Type | - | 2 NPN (Dual) | - |
| Current Collector Ic Max | - | 2A | - |
| Voltage Collector Emitter Breakdown Max | - | 60V | - |
| DC Current Gain hFE Min Ic Vce | - | 120 @ 1A, 2V | - |
| Vce Saturation Max Ib Ic | - | 90mV @ 50mA, 500mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 140MHz | - |