PHE13003C,126 vs PHE13003C,412 vs PHE13003C

 
PartNumberPHE13003C,126PHE13003C,412PHE13003C
DescriptionBipolar Transistors - BJT Single NPN 1.5A 2.1WBipolar Transistors - BJT Silicon diffused power transistor
ManufacturerWeEn SemiconductorsWeEn Semiconductors-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V400 V-
Collector Base Voltage VCBO700 V700 V-
Emitter Base Voltage VEBO9 V9 V-
Collector Emitter Saturation Voltage1.5 V1.5 V-
Maximum DC Collector Current1.5 A1.5 A-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max2525-
BrandWeEn SemiconductorsWeEn Semiconductors-
DC Collector/Base Gain hfe Min55-
Pd Power Dissipation2.1 W2.1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100005000-
SubcategoryTransistorsTransistors-
Part # Aliases934063922126934063922412-
Unit Weight0.016000 oz0.007654 oz-
Top