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| PartNumber | PMPB10XNE,115 | PMPB10XNEAX | PMPB10XNE |
| Description | MOSFET PMPB10XNE/SOT1220/REEL 7" Q1/T | MOSFET PMPB10XNEA/SOT1220/SOT1220 | |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020MD-6 | DFN-2020MD-6 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 12.9 A | 9 A | - |
| Rds On Drain Source Resistance | 10 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 650 mV | 400 mV | - |
| Qg Gate Charge | 23 nC | 34 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 12.5 W | 12.5 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 50 ns | 50 ns | 50 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 35 ns | 35 ns | 35 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 54 ns | 54 ns | 54 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
| Unit Weight | 0.000261 oz | - | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qualification | - | AEC-Q101 | - |
| Forward Transconductance Min | - | 60 S | - |
| Package Case | - | - | DFN2020MD-6 |
| Pd Power Dissipation | - | - | 12.5 W |
| Vgs Gate Source Voltage | - | - | +/- 12 V |
| Id Continuous Drain Current | - | - | 12.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 400 mV |
| Rds On Drain Source Resistance | - | - | 25 mOhms |
| Qg Gate Charge | - | - | 23 nC |
| Forward Transconductance Min | - | - | 60 S |