PMZ290UNE2YL vs PMZ290UNE vs PMZ290UNE2

 
PartNumberPMZ290UNE2YLPMZ290UNEPMZ290UNE2
DescriptionMOSFET 20V N-Channel Trench MOSFET
ManufacturerNexperia-NEXPERI
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDFN-1006-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1.2 A--
Rds On Drain Source Resistance320 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge0.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation715 mW--
ConfigurationSingle--
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Transistor Type1 N-Channel-1 N-Channel
BrandNexperia--
Fall Time4 ns-4 ns
Product TypeMOSFET--
Rise Time10 ns-10 ns
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns-11 ns
Typical Turn On Delay Time6 ns-6 ns
Unit Weight0.000028 oz--
Package Case--DFN1006-3
Pd Power Dissipation--715 mW
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--1.2 A
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--0.95 V
Rds On Drain Source Resistance--210 mOhms
Qg Gate Charge--1.4 nV
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