PMZB290UN,315 vs PMZB290UN vs PMZB290UN/FYL

 
PartNumberPMZB290UN,315PMZB290UNPMZB290UN/FYL
DescriptionMOSFET 20V Single N-channel Trench MOSFETPMZB290UN/FYL
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-1006B-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance290 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge1.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation715 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel--
BrandNexperia--
Forward Transconductance Min5.8 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18.5 ns--
Typical Turn On Delay Time4.5 ns--
Unit Weight0.000024 oz--
Series---
Package Case-3-XFDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-3-DFN1006B (0.6x1)-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-360mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-83pF @ 10V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-1A (Ta)-
Rds On Max Id Vgs-380 mOhm @ 500mA, 4.5V-
Vgs th Max Id-950mV @ 250μA-
Gate Charge Qg Vgs-0.68nC @ 4.5V-
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