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| PartNumber | PSMN7R8-100PSEQ | PSMN7R8-120ESQ | PSMN7R8-120ES |
| Description | MOSFET N-channel 100V 7.8mO std level MOSFET | MOSFET N-channel 120 V 7.9 mo FET | |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.063493 oz | 0.084199 oz | - |
| Vds Drain Source Breakdown Voltage | - | 120 V | - |
| Id Continuous Drain Current | - | 70 A | - |
| Rds On Drain Source Resistance | - | 6.72 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 167 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 349 W | - |
| Fall Time | - | 60.8 ns | - |
| Rise Time | - | 55.3 ns | - |
| Typical Turn Off Delay Time | - | 151.8 ns | - |
| Typical Turn On Delay Time | - | 45.5 ns | - |