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| PartNumber | PTFA080551E V1 | PTFA080551E | PTFA080551E V4 |
| Description | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 50 W | ||
| Manufacturer | Infineon | - | 148(10475C0)+19(1047 |
| Product Category | RF MOSFET Transistors | - | RF FETs |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 600 mA | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Gain | 18.5 dB | - | - |
| Output Power | 55 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-36265-2 | - | - |
| Packaging | Tray | - | - |
| Configuration | Single | - | - |
| Height | 3.56 mm | - | - |
| Length | 20.31 mm | - | - |
| Operating Frequency | 869 MHz to 960 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 15.34 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 219 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |