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| PartNumber | RFP2N10L | RFP2N10 | RFP2N12 |
| Description | MOSFET TO-220AB N-Ch Power | Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - Bulk (Alt: RFP2N12) |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 1.05 Ohms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.090478 oz | - | - |