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| PartNumber | RJP020N06T100 | RJP020N06 | RJP020N06-W |
| Description | MOSFET N-CH 60V 2.5A | ||
| Manufacturer | ROHM Semiconductor | - | ROHM |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 240 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 5 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Series | RJP020N06 | - | - |
| Transistor Type | 1 N-Channel MOSFET | - | - |
| Type | MOSFET | - | - |
| Width | 2.5 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | RJP020N06 | - | - |
| Unit Weight | 0.004603 oz | - | - |