RW1E025RPT2CR vs RW1E025RP vs RW1E025RP T2R

 
PartNumberRW1E025RPT2CRRW1E025RPRW1E025RP T2R
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
ManufacturerROHM SemiconductorROHM-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseSOT-563T-6SOT-563, SOT-666-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge5.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation700 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelCut Tape (CT)-
SeriesRW1E025RP--
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesRW1E025RP--
Unit Weight0.000106 oz--
Part Status-Active-
FET Type-P-Channel-
Drain to Source Voltage (Vdss)-30V-
Current Continuous Drain (Id) @ 25°C-2.5A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-4V, 10V-
Vgs(th) (Max) @ Id-2.5V @ 1mA-
Gate Charge (Qg) (Max) @ Vgs-5.2nC @ 5V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-480pF @ 10V-
FET Feature---
Power Dissipation (Max)-700mW (Ta)-
Rds On (Max) @ Id, Vgs-75 mOhm @ 2.5A, 10V-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-WEMT-
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