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| PartNumber | SBC847BDW1T1G | SBC847BDW1T3G | SBC847BDW1T1G-CUT TAPE |
| Description | Bipolar Transistors - BJT SS GP XSTR NPN 45V | Bipolar Transistors - BJT SS GP XSTR NPN 45V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.6 V | 250 mV | - |
| Maximum DC Collector Current | 100 mA | 100 mA | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC847BDW1 | BC847BDW1 | - |
| DC Current Gain hFE Max | 450 at 2 mA, 5 V | 450 at 2 mA, 5 V | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | 200 at 2 mA, 5 V | - |
| Pd Power Dissipation | 380 mW | 380 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |