SI2312-TP vs SI2312 vs SI2312-DS-T1/C2T0D

 
PartNumberSI2312-TPSI2312SI2312-DS-T1/C2T0D
DescriptionMOSFET N-Channel MOSFET, SOT-23 package
ManufacturerMicro Commercial Components (MCC)KEXIN-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance31.8 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTrenchFET--
Transistor Type1 N-Channel--
BrandMicro Commercial Components (MCC)--
Forward Transconductance Min6 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000282 oz--
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