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| PartNumber | SI3493BDV | SI3493BDV-T1 | SI3493BDV-T1-E3 |
| Description | MOSFET P-CH 20V 8A 6-TSOP | ||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Single |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SI3493BDV-E3 |
| Unit Weight | - | - | 0.000705 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-23-6 Thin, TSOT-23-6 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | 6-TSOP |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 2.97W |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 1805pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 8A (Tc) |
| Rds On Max Id Vgs | - | - | 27.5 mOhm @ 7A, 4.5V |
| Vgs th Max Id | - | - | 900mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 43.5nC @ 5V |
| Pd Power Dissipation | - | - | 2.08 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 84 ns |
| Rise Time | - | - | 72 ns |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 7 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 27.5 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 75 ns |
| Typical Turn On Delay Time | - | - | 22 ns |
| Channel Mode | - | - | Enhancement |