SI4126DY-T1-GE3 vs SI4126DY-T1-E3 vs SI4126DY-T1-GE3-CUT TAPE

 
PartNumberSI4126DY-T1-GE3SI4126DY-T1-E3SI4126DY-T1-GE3-CUT TAPE
DescriptionMOSFET 30V Vds 20V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current39 A--
Rds On Drain Source Resistance2.75 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge70 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min75 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time43 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI4126DY-GE3--
Unit Weight0.006596 oz--
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