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| PartNumber | SI4900 | SI4900DY | SI4900DY-T1 |
| Description | |||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SI4900DY-E3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 3.1W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 60V | - | - |
| Input Capacitance Ciss Vds | 665pF @ 15V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 5.3A | - | - |
| Rds On Max Id Vgs | 58 mOhm @ 4.3A, 10V | - | - |
| Vgs th Max Id | 3V @ 250μA | - | - |
| Gate Charge Qg Vgs | 20nC @ 10V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 65 ns 15 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.3 A | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Rds On Drain Source Resistance | 58 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 15 ns 20 ns | - | - |
| Typical Turn On Delay Time | 15 ns 10 ns | - | - |
| Channel Mode | Enhancement | - | - |