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| PartNumber | SI6433BDQ-T1-E3 | SI6433BDQ-T1-GE3 | SI6433BDQ-T1 |
| Description | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 | IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V | Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Series | SI6 | SI6433BDQ | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI6433BDQ-E3 | - | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | - |
| Part Aliases | - | SI6433BDQ-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TSSOP-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 P-Channel | - |
| Pd Power Dissipation | - | 1.05 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 60 ns | - |
| Rise Time | - | 60 ns | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 4 A | - |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - |
| Rds On Drain Source Resistance | - | 40 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 70 ns | - |
| Typical Turn On Delay Time | - | 45 ns | - |
| Channel Mode | - | Enhancement | - |