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| PartNumber | SI6968BEDQ-T1-E3-CUT TAPE | SI6968BEDQ-T1 | SI6968BEDQ-T1-E3 |
| Description | MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3 | MOSFET 2N-CH 20V 5.2A 8TSSOP | |
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SI6968BEDQ-E3 |
| Unit Weight | - | - | 0.005573 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 8-TSSOP |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 N-Channel (Dual) Common Drain |
| Power Max | - | - | 1W |
| Transistor Type | - | - | 2 N-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.2A |
| Rds On Max Id Vgs | - | - | 22 mOhm @ 6.5A, 4.5V |
| Vgs th Max Id | - | - | 1.6V @ 250μA |
| Gate Charge Qg Vgs | - | - | 18nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 510 ns |
| Rise Time | - | - | 330 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 6.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 22 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 860 ns |
| Typical Turn On Delay Time | - | - | 245 ns |
| Forward Transconductance Min | - | - | 30 S |
| Channel Mode | - | - | Enhancement |