SI7145DP-T1-GE3 vs SI7145DP-T1-GE3-CUT TAPE vs SI7145DP-T1-E3

 
PartNumberSI7145DP-T1-GE3SI7145DP-T1-GE3-CUT TAPESI7145DP-T1-E3
DescriptionMOSFET -30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance2.1 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge413 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSI7--
Transistor Type1 P-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min110 S--
Fall Time27 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time27 ns--
Part # AliasesSI7145DP-GE3--
Unit Weight0.017870 oz--
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