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| PartNumber | SI7852ADP-T1-GE3 | SI7852ADP-T1-E3 | SI7852 |
| Description | MOSFET 80V 30A 62.5W 17mohm @ 10V | MOSFET 80V 30A 62.5W 17mohm @ 10V | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI7 | SI7 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI7852ADP-GE3 | SI7852ADP-E3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | PowerPAK-SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Id Continuous Drain Current | - | 30 A | - |
| Rds On Drain Source Resistance | - | 17 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 30.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 62.5 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 5.15 mm | - |
| Forward Transconductance Min | - | 25 S | - |
| Fall Time | - | 9 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 26 ns | - |
| Typical Turn On Delay Time | - | 16 ns | - |