SI7852DP-T1-E3 vs SI7852DP-T1-GE3 vs SI7852DP-T1

 
PartNumberSI7852DP-T1-E3SI7852DP-T1-GE3SI7852DP-T1
DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8MOSFET 80V Vds 20V Vgs PowerPAK SO-8MOSFET RECOMMENDED ALT 781-SI7852DP-E3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current12.5 A--
Rds On Drain Source Resistance16.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI7SI7-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min25 S--
Fall Time31 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesSI7852DP-E3SI7852DP-GE3-
Unit Weight0.017870 oz0.017870 oz-
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