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| PartNumber | SI8800EDB-T2-E1 | SI8802DB-T2-E1 | SI8800EDB-T2-E1DKR-ND |
| Description | MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI8 | SI8 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | MicroFoot-4 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 3.5 A | - |
| Rds On Drain Source Resistance | - | 54 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 350 mV | - |
| Vgs Gate Source Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 4.3 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 0.9 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 0.65 mm | - |
| Length | - | 1.6 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 1.6 mm | - |
| Forward Transconductance Min | - | 13 S | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 22 ns | - |
| Typical Turn On Delay Time | - | 5 ns | - |