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| PartNumber | SI9433BDY-T1-E3 | SI9433BDY-T1-E3-CUT TAPE | SI9433BDY-T1-E |
| Description | MOSFET 20V 6.2A 0.04Ohm | ||
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | TrenchFET/PowerPAK |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI9 | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI9433BDY-E3 | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Part Aliases | - | - | SI9433BDY-E3 |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | 8-SO |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 1.3W |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 4.5A (Ta) |
| Rds On Max Id Vgs | - | - | 40 mOhm @ 6.2A, 4.5V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 14nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.3 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 55 ns |
| Rise Time | - | - | 55 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 40 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 65 ns |
| Typical Turn On Delay Time | - | - | 40 ns |
| Forward Transconductance Min | - | - | 15 S |
| Channel Mode | - | - | Enhancement |