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| PartNumber | SIE848DF-T1-E3 | SIE844DF-T1-GE3 | SIE844DF-T1-E3 |
| Description | MOSFET RECOMMENDED ALT 781-SI7658ADP-T1-GE3 | MOSFET 30V 44.5A 25W 7.0mohm @ 10V | RF Bipolar Transistors MOSFET 30V 44.5A 25W 7.0mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay / Siliconix |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PolarPAK-10 | - | - |
| Tradename | TrenchFET, PolarPAK | TrenchFET, PolarPAK | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.8 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIE | SIE | - |
| Width | 5.16 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SIE848DF-E3 | SIE844DF-GE3 | - |
| Part Aliases | - | - | SIE844DF-E3 |
| Package Case | - | - | PolarPAK-10 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 5.2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 10 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 20.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 7 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 25 ns |
| Typical Turn On Delay Time | - | - | 25 ns |
| Channel Mode | - | - | Enhancement |