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| PartNumber | SIHB100N60E-GE3 | SIHB065N60E-GE3 | SIHB10N40D |
| Description | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 30 A | 40 A | - |
| Rds On Drain Source Resistance | 100 mOhms | 65 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 50 nC | 74 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 208 W | 250 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | E | E | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 11 S | 12 S | - |
| Fall Time | 20 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 34 ns | 46 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 54 ns | - |
| Typical Turn On Delay Time | 21 ns | 28 ns | - |