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| PartNumber | SIHD3N50D-E3 | SIHD3N50D | SIHD3N50D FQD3N59C |
| Description | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 3.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | D | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.011993 oz | - | - |