SIHFL9110TR-GE3 vs SIHFL9110 vs SIHFL9110-E3

 
PartNumberSIHFL9110TR-GE3SIHFL9110SIHFL9110-E3
DescriptionMOSFET 100V Vds 20V Vgs SOT-223
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.1 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage- 4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSIH--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min0.82 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity1--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.009171 oz--
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