SIHH068N60E-T1-GE3 vs SIHH040404-65NL-R32 vs SIHH0605-R10M

 
PartNumberSIHH068N60E-T1-GE3SIHH040404-65NL-R32SIHH0605-R10M
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-8x8-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance68 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge80 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation202 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesE--
Transistor Type1 N-Channel E-Series Power MOSFET--
BrandVishay / Siliconix--
Forward Transconductance Min9.3 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time148 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time56 ns--
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