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| PartNumber | SIHW30N60E-GE3 | SIHW33N60E-GE3 | SIHW33N60E |
| Description | MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | MOSFET 600V Vds 30V Vgs TO-247AD | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-247AD-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 29 A | 33 A | - |
| Rds On Drain Source Resistance | 125 mOhms | 99 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 85 nC | 100 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 W | 278 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Bulk | Tube | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Series | E | E | - |
| Width | 5.31 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 36 ns | 54 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 32 ns | 60 ns | - |
| Factory Pack Quantity | 480 | 480 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 63 ns | 99 ns | - |
| Typical Turn On Delay Time | 19 ns | 28 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |