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| PartNumber | SIZ710DT-T1-GE3 | SIZ710DT-T1 | SIZ710DT-T1-GE |
| Description | MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAIR-6x3.7-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 16 A, 35 A | - | - |
| Rds On Drain Source Resistance | 6.8 mOhms, 3.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC, 60 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 27 W, 48 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SIZ | TrenchFETR | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 45 S, 85 S | - | - |
| Fall Time | 12 ns, 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns, 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns, 30 ns | - | - |
| Typical Turn On Delay Time | 15 ns, 25 ns | - | - |
| Part # Aliases | SIZ710DT-GE3 | - | - |
| Part Aliases | - | SIZ710DT-GE3 | - |
| Package Case | - | 6-PowerPair | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-PowerPair | - |
| FET Type | - | 2 N-Channel (Half Bridge) | - |
| Power Max | - | 27W, 48W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 820pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 16A, 35A | - |
| Rds On Max Id Vgs | - | 6.8 mOhm @ 19A, 10V | - |
| Vgs th Max Id | - | 2.2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 10V | - |
| Pd Power Dissipation | - | 27 W 48 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 16 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V to 2.2 V | - |
| Rds On Drain Source Resistance | - | 5.5 mOhms 2.7 mOhms | - |
| Qg Gate Charge | - | 11.5 nC 38 nC | - |
| Forward Transconductance Min | - | 45 S 85 S | - |