| PartNumber | SMBTA 56 E6327 | SMBTA 56 E6433 | SMBTA56E6327HTSA1 |
| Description | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | 80 V |
| Collector Base Voltage VCBO | 80 V | 80 V | 80 V |
| Emitter Base Voltage VEBO | 4 V | 4 V | 4 V |
| Collector Emitter Saturation Voltage | 0.25 V | - | 0.25 V |
| Maximum DC Collector Current | 1 A | 0.5 A | 1 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | SMBTA56 | SMBTA56 | SMBTA56 |
| Height | 1 mm | 1 mm | 1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Packaging | Reel | Reel | Reel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 500 mA | 0.5 A | 500 mA |
| Pd Power Dissipation | 330 mW | 330 mW | 330 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Factory Pack Quantity | 3000 | 10000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | SMBTA56E6327HTSA1 SMBTA56E6327XT SP000011692 | SMBTA56E6433HTMA1 SMBTA56E6433XT SP000011695 | 56 E6327 SMBTA SMBTA56E6327XT SP000011692 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |