PartNumber | SPD06N80C3 | SPD06N80C3(SP001117772) | SPD06N80C3,06N80C3 |
Description | IGBT Transistors MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 | ||
Manufacturer | INFINEON | - | - |
Product Category | FETs - Single | - | - |
Series | CoolMOS C3 | - | - |
Packaging | Reel | - | - |
Part Aliases | SP000318350 SPD06N80C3BTMA1 SPD06N80C3XT | - | - |
Unit Weight | 0.139332 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-252-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 83 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 8 ns | - | - |
Rise Time | 15 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Rds On Drain Source Resistance | 900 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 72 ns | - | - |
Typical Turn On Delay Time | 25 ns | - | - |
Channel Mode | Enhancement | - | - |