 |  |  | |
| PartNumber | SQ1922AEEH-T1_GE3 | SQ1922EEH-T1_GE3 | SQ1920 |
| Description | MOSFET Dual Nch 20V Vds SOT-363 | MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SC-70-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 0.85 A | 840 mA | - |
| Rds On Drain Source Resistance | 300 mOhms | 350 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 1.2 nC | 700 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 1.5 W | 1.5 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.6 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8 ns | 15 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Qualification | - | AEC-Q101 | - |