SQ3419AEEV-T1_GE3 vs SQ3419EEV-T1-GE3 vs SQ3419EEV

 
PartNumberSQ3419AEEV-T1_GE3SQ3419EEV-T1-GE3SQ3419EEV
DescriptionMOSFET -40V Vds TSOP-6 AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current6.9 A--
Rds On Drain Source Resistance48 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge12.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time31 ns--
Product TypeMOSFETMOSFET-
Rise Time24 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time9 ns--
Part # Aliases-SQ3419EEV-GE3-
Unit Weight-0.000705 oz-
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