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| PartNumber | SQ3987EV-T1_GE3 | SQ3985EV-T1_GE3 | SQ3985EV |
| Description | MOSFET Dual P-Ch -30V AEC-Q101 Qualified | MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | - |
| Id Continuous Drain Current | 3 A | 3.9 A | - |
| Rds On Drain Source Resistance | 85 mOhms, 85 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 8 V | - |
| Qg Gate Charge | 12.2 nC, 12.2 nC | 4.6 nC, 4.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 1.67 W | 3 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Series | SQ3987EV | SQ | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 4.2 S, 4.2 S | 7 S, 7 S | - |
| Fall Time | 2.2 ns, 2.2 ns | 20 ns, 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.4 ns, 2.4 ns | 26 ns, 26 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18.4 ns, 18.4 ns | 40 ns, 40 ns | - |
| Typical Turn On Delay Time | 6.6 ns, 6.6 ns | 5 ns, 5 ns | - |
| Unit Weight | 0.001552 oz | - | - |
| Tradename | - | TrenchFET | - |