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| PartNumber | SQ4920EY-T1_GE3 | SQ4920EY-T1-GE3-CUT TAPE | SQ4920EY-T1 |
| Description | MOSFET 30V 8A 4.4W AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 30 nC, 30 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 4.4 W | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | - | Tape & Reel (TR) |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SQ | - | TrenchFETR |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 43 S, 43 S | - | - |
| Fall Time | 8 ns, 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 10 ns | - | 10 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns, 25 ns | - | 25 ns |
| Typical Turn On Delay Time | 7 ns, 7 ns | - | 7 ns |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 4.4W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 1465pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 8A |
| Rds On Max Id Vgs | - | - | 14.5 mOhm @ 6A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 30nC @ 10V |
| Pd Power Dissipation | - | - | 4.4 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 7.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 14.5 mOhms |
| Qg Gate Charge | - | - | 19.7 nC |
| Forward Transconductance Min | - | - | 43 S |