SQ4940AEY-T1_GE3 vs SQ4940AEY vs SQ4940AEY-T1-E3

 
PartNumberSQ4940AEY-T1_GE3SQ4940AEYSQ4940AEY-T1-E3
DescriptionMOSFET 40V 8A 4W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance20 mOhms, 20 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge43 nC, 43 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation4 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSQ--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min33 S, 33 S--
Fall Time9 ns, 9 ns--
Product TypeMOSFET--
Rise Time13 ns, 13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns, 20 ns--
Typical Turn On Delay Time8 ns, 8 ns--
Unit Weight0.017870 oz--
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