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| PartNumber | SQ9945BEY-T1_GE3 | SQ9945BEY-T1-GE3-CUT TAPE | SQ9945BEY-T1-E3 |
| Description | MOSFET 60V 5.4A 4W AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.4 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms, 45 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC, 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 12 S, 12 S | - | - |
| Fall Time | 1.7 ns, 1.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.8 ns, 2.8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17 ns, 17 ns | - | - |
| Typical Turn On Delay Time | 6 ns, 6 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |