SQD15N06-42L_GE3 vs SQD15N06-42L vs SQD15N06-42L-T4GE3

 
PartNumberSQD15N06-42L_GE3SQD15N06-42LSQD15N06-42L-T4GE3
DescriptionMOSFET 60V 15A 37W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance36 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation37 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min11 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.050717 oz--
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