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| PartNumber | SQD30N05-20L_GE3 | SQD30N05-20L_T4GE3 | SQD30N05-20L |
| Description | MOSFET N-Channel 55V AEC-Q101 Qualified | MOSFET 55V Vds 20V Vgs TO-252 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 16 mOhms | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 18 nC | 18 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 50 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 34 S | 34 S | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 2000 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | 18 ns | - |
| Typical Turn On Delay Time | 7 ns | 7 ns | - |
| Unit Weight | 0.011993 oz | - | - |