SQD50N05-11L_GE3 vs SQD50N05-11 vs SQD50N05-11L

 
PartNumberSQD50N05-11L_GE3SQD50N05-11SQD50N05-11L
DescriptionMOSFET 50V 50A 75W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance9 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation75 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min58 S--
Fall Time7.5 ns--
Product TypeMOSFET--
Rise Time11.5 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22.5 ns--
Typical Turn On Delay Time8.5 ns--
Unit Weight0.050717 oz--
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