SQD50P06-15L_GE3 vs SQD50P06-15L vs SQD50P06-15L-E3

 
PartNumberSQD50P06-15L_GE3SQD50P06-15LSQD50P06-15L-E3
DescriptionMOSFET 60V 50A 136W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance13.5 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesSQ--
Transistor Type1 P-Channel--
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min50 S--
Fall Time39 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.050717 oz--
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